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110 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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110 V, N-channel Trench MOSFET
110 V, N-channel Trench MOSFET
| Part | Package / Case | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Supplier Device Package | FET Type | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 6-UDFN Exposed Pad | 5 A | 110 V | 13 W 580 mW | 1.4 V | DFN2020M-6 | N-Channel | 70 mOhm | 741.5 pF | MOSFET (Metal Oxide) | 12 V | 6.7 nC | 2.5 V | 4.5 V | Surface Mount | 150 °C | -55 °C |