FJA4313 Series

NPN Epitaxial Silicon Transistor

Catalog

NPN Epitaxial Silicon Transistor

Part	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Frequency - Transition	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max) [Max]	Package / Case	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type
ON Semiconductor FJA4313RTU	3 V	TO-3PN	30 MHz	NPN	250 V	17 A	SC-65-3 TO-3P-3	150 °C	55	130 W	5 µA	Through Hole

NPN Epitaxial Silicon Transistor

• High Current Capability: IC = 15 A

• High Power Dissipation : 130 watts

• High Frequency : 30 MHz

• High Voltage : VCEO = 250 V

• Wide S.O.A for reliable operation

• Excellent Gain Linearity for low THD

• Complement to 2SA1962/FJA4213

• Thermal and electrical Spice models are available