Catalog
650V, 10A, SMD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching. (Wide creepage distance, 3-pin package)
Beta
⌘K
650V, 10A, SMD, Silicon-carbide (SiC) SBD
650V, 10A, SMD, Silicon-carbide (SiC) SBD
| Part | Supplier Device Package | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Speed | Mounting Type | Current - Average Rectified (Io) | Reverse Recovery Time (trr) | Technology | Voltage - Forward (Vf) (Max) @ If | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | TO-263L | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 650 V | 200 µA | 175 °C | 500 mA | Surface Mount | 10 A | 0 ns | SiC (Silicon Carbide) Schottky | 1.55 V | 360 pF |