Catalog
1200V, 5A, THD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching . (2-pin package)
Beta
⌘K
1200V, 5A, THD, Silicon-carbide (SiC) SBD
1200V, 5A, THD, Silicon-carbide (SiC) SBD
| Part | Supplier Device Package | Technology | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If [Max] | Voltage - Forward (Vf) (Max) @ If | Speed | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | TO-220ACFP | SiC (Silicon Carbide) Schottky | Through Hole | 270 pF | 0 ns | TO-220-2 | 1.2 kV | 5 A | 100 µA | 1.6 V | 5 A | 500 mA | 175 °C |