CSD87312Q3E Series

30-V, N channel NexFET™ power MOSFET, dual common source SON 3 mm x 3 mm, 38 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, dual common source SON 3 mm x 3 mm, 38 mOhm

Part	Package / Case	Mounting Type	FET Feature	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Configuration	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology
Texas Instruments CSD87312Q3E	8-PowerTDFN	Surface Mount	Logic Level Gate	1.3 V	30 V	8-VSON (3.3x3.3)	33 mOhm	27 A	2 N-Channel (Dual) Common Source	8.2 nC	2.5 W	-55 °C	150 °C	1250 pF	MOSFET (Metal Oxide)

Catalog

30-V, N channel NexFET™ power MOSFET, dual common source SON 3 mm x 3 mm, 38 mOhm

Key Features

• Common Source ConnectionUltra Low Drain to Drain On-ResistanceSpace Saving SON 3.3 x 3.3mm Plastic PackageOptimized for 5V Gate DriveLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeCommon Source ConnectionUltra Low Drain to Drain On-ResistanceSpace Saving SON 3.3 x 3.3mm Plastic PackageOptimized for 5V Gate DriveLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen Free

Description

The CSD87312Q3E is a 30V common-source, dual N-channel device designed for adaptor/USB input protection. This SON 3.3 x 3.3mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications. The CSD87312Q3E is a 30V common-source, dual N-channel device designed for adaptor/USB input protection. This SON 3.3 x 3.3mm device has low drain to drain on-resistance that minimizes losses and offers low component count for space constrained multi-cell battery charging applications.