SIHD180 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 600V 19A TO252AA
| Part | Mounting Type | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Vgs (Max) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | Surface Mount | 195 mOhm | 10 V | 600 V | 5 V | 32 nC | DPAK | 30 V | N-Channel | -55 °C | 150 °C | MOSFET (Metal Oxide) | 1080 pF | 156 W | 19 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 |