GNP2070TD-Z Series
EcoGaN™, 650V 27A TOLL-8N, E-mode Gallium-Nitride(GaN) HEMT
Manufacturer: Rohm Semiconductor
Catalog
EcoGaN™, 650V 27A TOLL-8N, E-mode Gallium-Nitride(GaN) HEMT
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EcoGaN™, 650V 27A TOLL-8N, E-mode Gallium-Nitride(GaN) HEMT
EcoGaN™, 650V 27A TOLL-8N, E-mode Gallium-Nitride(GaN) HEMT
EcoGaN™, 650V 27A TOLL-8N, E-mode Gallium-Nitride(GaN) HEMT
| Part | Current - Continuous Drain (Id) @ 25°C | Package / Case | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) [Min] | Vgs (Max) [Max] | Supplier Device Package | Rds On (Max) @ Id, Vgs | Technology | Drain to Source Voltage (Vdss) | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 27 A | 8-PowerSFN | 200 pF | N-Channel | 159 W | 5.2 nC | -10 V | 6.5 V | TOLL-8N | 98 mOhm | MOSFET (Metal Oxide) | 650 V | Surface Mount | 150 °C | -55 °C | 5 V 6 V | 2.5 V |