TPCP8107 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFET P-CH 40V 8A PS-8
| Part | Power Dissipation (Max) | Qualification | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Technology | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | FET Type | Vgs (Max) [Max] | Vgs (Max) [Min] | Operating Temperature | Mounting Type | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 1 W | AEC-Q101 | 3 V | 44.6 nC | MOSFET (Metal Oxide) | 2160 pF | 18 mOhm | 6 V 10 V | 40 V | 8 A | PS-8 | P-Channel | 10 V | -20 V | 175 °C | Surface Mount | Automotive |