FDB3652_F085 Series

N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ

Catalog

N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ

Part	Rds On (Max) @ Id, Vgs	Grade	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Package / Case	Qualification	Technology	Power Dissipation (Max)	Supplier Device Package
ON Semiconductor FDB3652-F085	16 mOhm	Automotive	6 V 10 V	-55 °C	175 ░C	100 V	9 A 61 A	53 nC	Surface Mount	4 V	20 V	2880 pF	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	AEC-Q101	MOSFET (Metal Oxide)	150 W	TO-263 (D2PAK)

Catalog

N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ

Key Features

• RDS(ON)= 14mΩ (Typ.), VGS= 10V, ID= 61A

• Qg(tot)= 41nC (Typ.), VGS= 10V

• Low Miller Charge

• Low QRRBody Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

• RoHS CompliantFormerly developmental type 82769

Description

N-Channel PowerTrench®MOSFET, 100V, 61A, 16mΩ, Fairchild’s latest shielded gate PowerTrench®MOSFET, which combines a smaller QSYNCand soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.