Catalog
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Key Features
• LD-MOS Technology with the Lowest Figure of Merit:
• RD1D2(ON) = 63mΩ to Minimize On-State Losses
• Qg = 3.2nC for Ultra-Fast Switching
• VGS(TH) = -0.74V Typ. for a Low Turn-On Potential
• CSP with Footprint 1.5mm × 1.5mm
• Height = 0.62mm for Low Profile
• Gate ESD Protection <HBM Class 3A>
• Totally Lead-Free & Fully RoHS Compliant
• Halogen and Antimony Free. "Green" Device
Description
AI
This new generation MOSFET is designed to minimize the on-state resistance (RD1D2(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
