FCH47N60F Series

Power MOSFET, N-Channel, SUPERFET®, FRFET®, 600 V, 47 A, 73 mΩ, TO-247

Catalog

Power MOSFET, N-Channel, SUPERFET®, FRFET®, 600 V, 47 A, 73 mΩ, TO-247

Part	Mounting Type	Power Dissipation (Max) [Max]	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FCH47N60F-F133	Through Hole	417 W	MOSFET (Metal Oxide)	5 V	600 V	70 mOhm	TO-247-3	N-Channel	270 nC	TO-247-3	30 V	-55 °C	150 °C	10 V	8000 pF	47 A
ON Semiconductor FCH47N60-F133	Through Hole	417 W	MOSFET (Metal Oxide)	5 V	600 V	70 mOhm	TO-247-3	N-Channel	270 nC	TO-247-3	30 V	-55 °C	150 °C	10 V	8000 pF	47 A

Catalog

Power MOSFET, N-Channel, SUPERFET®, FRFET®, 600 V, 47 A, 73 mΩ, TO-247

Key Features

• 650V @TJ= 150°C

• Typ. RDS(on)= 62mΩ

• Fast recovery type ( trr= 240ns )

• Ultra low gate charge ( Typ. Qg= 210nC )

• Low effective output capacitance ( Typ. Coss.eff = 420pF )

• 100% avalanche tested

Description

SuperFET®MOSFET is the first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.