FQH44N10 Series

Power MOSFET, N-Channel, QFET®, 100 V, 48 A, 39 mΩ, TO-247

Catalog

Power MOSFET, N-Channel, QFET®, 100 V, 48 A, 39 mΩ, TO-247

Part	Drain to Source Voltage (Vdss)	Package / Case	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FQH44N10-F133	100 V	TO-247-3	MOSFET (Metal Oxide)	4 V	TO-247-3	10 V	Through Hole	25 V	N-Channel	39 mOhm	62 nC	48 A	180 W	1800 pF	-55 °C	175 ░C

Catalog

Power MOSFET, N-Channel, QFET®, 100 V, 48 A, 39 mΩ, TO-247

Key Features

• 48A, 100V, RDS(on)= 39mΩ(Max.) @VGS= 10 V, ID= 24A

• Low gate charge ( Typ. 48nC)

• Low Crss( Typ. 85pF)

• 100% avalanche tested

• 175°C maximum junction temperature rating

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.