PJD50 Series
Manufacturer: Panjit International Inc.
MOSFETS 40V N-CHANNEL ENHANCEMENT MODE MOSFET
| Part | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge (Qg) (Max) @ Vgs [Max] | Qualification | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Mounting Type | Technology | Grade | Vgs (Max) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Panjit International Inc. | 9.5 mOhm | 2.4 W 64.9 W | 175 °C | -55 °C | 22 nC | AEC-Q101 | 9.6 A 50 A | TO-252AA | Surface Mount | MOSFET (Metal Oxide) | Automotive | 20 V | 2.5 V | 40 V | 1258 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | N-Channel | 4.5 V 10 V | |
Panjit International Inc. | 25 mOhm | 2 W 83 W | 150 °C | -55 °C | 29 nC | AEC-Q101 | 6.3 A 42 A | TO-252AA | Surface Mount | MOSFET (Metal Oxide) | Automotive | 20 V | 2.5 V | 100 V | 1485 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | N-Channel | 4.5 V 10 V | |
Panjit International Inc. | 12 mOhm | 2.4 W 75 W | 175 °C | -55 °C | AEC-Q101 | 9 A 50 A | TO-252AA | Surface Mount | MOSFET (Metal Oxide) | Automotive | 20 V | 2.5 V | 40 V | 2767 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | P-Channel | 4.5 V 10 V | 23 nC | |
Panjit International Inc. | 25 mOhm | 2 W 83 W | 150 °C | -55 °C | 29 nC | 6.3 A 42 A | TO-252AA | Surface Mount | MOSFET (Metal Oxide) | 20 V | 2.5 V | 100 V | 1485 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | N-Channel | 4.5 V 10 V |