P600 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE P600 600V 6A 175C
| Part | Supplier Device Package | Technology | Speed | Speed | Package / Case | Voltage - Forward (Vf) (Max) @ If [Max] | Reverse Recovery Time (trr) | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Mounting Type | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | P600 | Standard | Standard Recovery >500ns | 200 mA | P600 Axial | 900 mV | 2.5 µs | -50 °C | 150 °C | Through Hole | 6 A | 5 µA | 150 pF | 600 V |
Vishay General Semiconductor - Diodes Division | P600 | Standard | Standard Recovery >500ns | 200 mA | P600 Axial | 900 mV | 2.5 µs | -50 °C | 150 °C | Through Hole | 6 A | 5 µA | 150 pF | 200 V |
Vishay General Semiconductor - Diodes Division | P600 | Standard | Standard Recovery >500ns | 200 mA | P600 Axial | 900 mV | 2.5 µs | -50 °C | 150 °C | Through Hole | 6 A | 5 µA | 150 pF | 800 V |
Vishay General Semiconductor - Diodes Division | P600 | Standard | Standard Recovery >500ns | 200 mA | P600 Axial | 900 mV | 2.5 µs | -50 °C | 150 °C | Through Hole | 6 A | 5 µA | 150 pF | 50 V |
Vishay General Semiconductor - Diodes Division | P600 | Standard | Standard Recovery >500ns | 200 mA | P600 Axial | 900 mV | 2.5 µs | -50 °C | 150 °C | Through Hole | 6 A | 5 µA | 150 pF | 200 V |
Vishay General Semiconductor - Diodes Division | P600 | Standard | Standard Recovery >500ns | 200 mA | P600 Axial | 900 mV | 2.5 µs | -50 °C | 150 °C | Through Hole | 6 A | 5 µA | 150 pF | 800 V |
Vishay General Semiconductor - Diodes Division | P600 | Standard | Standard Recovery >500ns | 200 mA | P600 Axial | 900 mV | 2.5 µs | -50 °C | 150 °C | Through Hole | 6 A | 5 µA | 150 pF | 400 V |