SIHP14 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 600V 13A TO220AB
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Vgs(th) (Max) @ Id | Mounting Type | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Package / Case | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 64 nC | 30 V | 4 V | Through Hole | 309 mOhm | TO-220AB | MOSFET (Metal Oxide) | N-Channel | 1205 pF | 10 V | -55 °C | 150 °C | 600 V | TO-220-3 | 13 A | 147 W |