SI4497 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET P-CH 30V 36A 8SO
| Part | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Package / Case | Package / Case [y] | Package / Case [x] | Rds On (Max) @ Id, Vgs | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Vgs (Max) | FET Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 9685 pF | -55 °C | 150 °C | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 3.3 mOhm | 8-SOIC | 36 A | Surface Mount | 4.5 V 10 V | 285 nC | 2.5 V | 3.5 W 7.8 W | 20 V | P-Channel | 30 V |