MJB45H11 Series

Bipolar Transistor, PNP, 80 V, 10 A

Catalog

Bipolar Transistor, PNP, 80 V, 10 A

Part	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Package / Case	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce
ON Semiconductor MJB45H11G	D2PAK	10 µA	40 MHz	Surface Mount	80 V	-55 °C	150 °C	PNP	1 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2 W	40 hFE
ON Semiconductor MJB45H11	D2PAK	10 µA	40 MHz	Surface Mount	80 V	-55 °C	150 °C	PNP	1 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2 W	40 hFE
ON Semiconductor NJVMJB45H11T4G	D2PAK	10 µA	40 MHz	Surface Mount	80 V	-55 °C	150 °C	PNP	1 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2 W	40 hFE

Catalog

Bipolar Transistor, PNP, 80 V, 10 A

Key Features

• Low Collector-Emitter Saturation Voltage -VCE(sat)= 1.0 V (Max) @ 8.0 A

• Fast Switching Speeds

• Complementary Pairs Simplifies Designs

• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• PbFree Packages are Available

Description

The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.