2SJ668 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET P-CHANNEL 60V 5A PW-MOLD
| Part | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Vgs (Max) | Technology | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Mounting Type | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | FET Type | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 2 V | 700 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 4 V | 10 V | 20 V | MOSFET (Metal Oxide) | 5 A | 60 V | 170 mOhm | Surface Mount | 150 °C | 15 nC | PW-MOLD | P-Channel | 20 W |