S8CJ Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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DIODE GEN PURP 600V 8A DO214AB
| Part | Mounting Type | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Package / Case | Technology | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Voltage - Forward (Vf) (Max) @ If | Speed | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Reverse Recovery Time (trr) | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | Surface Mount | 150 °C | -55 °C | DO-214AB (SMC) | DO-214AB SMC | Standard | 10 µA | 79 pF | 985 mV | Standard Recovery >500ns | 200 mA | 600 V | 8 A | 4 µs | ||
 Vishay General Semiconductor - Diodes Division | Surface Mount | 150 °C | -55 °C | DO-214AB (SMC) | DO-214AB SMC | Standard | 10 µA | 79 pF | 985 mV | Standard Recovery >500ns | 200 mA | 600 V | 8 A | 4 µs | Automotive | AEC-Q101 |