IDH10SG60 Series
Manufacturer: INFINEON
Beta
⌘K
SILICON CARBIDE SCHOTTKY DIODE, THINQ GEN III SERIES, SINGLE, 600 V, 10 A, 16 NC, TO-220
| Part | Technology | Voltage - Forward (Vf) (Max) @ If [Max] | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Package / Case | Reverse Recovery Time (trr) | Speed | Mounting Type | Supplier Device Package | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Average Rectified (Io) | Voltage - DC Reverse (Vr) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | SiC (Silicon Carbide) Schottky | 2.1 V | 90 µA | 290 pF | TO-220-2 | 0 ns | 500 mA | Through Hole | PG-TO220-2-1 | 175 ░C | -55 °C | 10 A | 600 V |