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SN74CBT3345C

SN74CBT3345C Series

5-V, 1:1 (SPST), 8-channel bus switch with –2-V undershoot protection

Manufacturer: Texas Instruments

Catalog

5-V, 1:1 (SPST), 8-channel bus switch with –2-V undershoot protection

Key Features

Undershoot Protection for Off-Isolation on A and B Ports Up to –2 VBidirectional Data Flow, With Near-Zero Propagation DelayLow ON-State Resistance (ron) Characteristics (ron= 3Typical)Low Input/Output Capacitance Minimizes Loading and Signal Distortion Cio(OFF)= 5.5 pF Typical)Data and Control Inputs Provide Undershoot Clamp DiodesLow Power Consumption ICC= 3 µA Max)VCCOperating Range From 4 V to 5.5 VData I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS OutputsIoffSupports Partial-Power-Down Mode OperationLatch-Up Performance Exceeds 100 mA Per JESD 78, Class IIESD Performance Tested Per JESD 222000-V Human-Body Model (A114-B, Class II)1000-V Charged-Device Model (C101)Supports Both Digital and Analog Applications: USB Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal GatingUndershoot Protection for Off-Isolation on A and B Ports Up to –2 VBidirectional Data Flow, With Near-Zero Propagation DelayLow ON-State Resistance (ron) Characteristics (ron= 3Typical)Low Input/Output Capacitance Minimizes Loading and Signal Distortion Cio(OFF)= 5.5 pF Typical)Data and Control Inputs Provide Undershoot Clamp DiodesLow Power Consumption ICC= 3 µA Max)VCCOperating Range From 4 V to 5.5 VData I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS OutputsIoffSupports Partial-Power-Down Mode OperationLatch-Up Performance Exceeds 100 mA Per JESD 78, Class IIESD Performance Tested Per JESD 222000-V Human-Body Model (A114-B, Class II)1000-V Charged-Device Model (C101)Supports Both Digital and Analog Applications: USB Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

Description

AI
The SN74CBT3345C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3345C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The SN74CBT3345C is organized as an 8-bit bus switch with two output-enable (OE, OE\) inputs. When OE is high or OE\ is low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is low and OE\ is high, the bus switch is OFF and the high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. To ensure the high-impedance state during power up or power down, OE\ should be tied to VCCthrough a pullup resistor and OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sinking/current-sourcing capability of the driver. The SN74CBT3345C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3345C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The SN74CBT3345C is organized as an 8-bit bus switch with two output-enable (OE, OE\) inputs. When OE is high or OE\ is low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is low and OE\ is high, the bus switch is OFF and the high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Iofffeature ensures that damaging current will not backflow through the device when it is powered down. To ensure the high-impedance state during power up or power down, OE\ should be tied to VCCthrough a pullup resistor and OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sinking/current-sourcing capability of the driver.