FDD9507L-F085 Series

P-Channel POWERTRENCH® MOSFET, -40 V, -100 A, 4.4 mΩ

Catalog

P-Channel POWERTRENCH® MOSFET, -40 V, -100 A, 4.4 mΩ

Part	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
ON Semiconductor FDD9507L-F085	3 V	40 V	4.5 V 10 V	100 A	Surface Mount	P-Channel	16 V	4.4 mOhm	227 W	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	130 nC	-55 °C	175 ░C	6250 pF	TO-252 (DPAK)

P-Channel POWERTRENCH® MOSFET, -40 V, -100 A, 4.4 mΩ

• Typical RDS(on)= 3.3 mΩ at VGS= -10V, ID= -80 A

• Typical Qg(tot)= 110 nC at VGS= -10V, ID= -80 A

• UIS Capability

• RoHS Compliant

• Qualified to AEC Q101

P-Channel POWERTRENCH®MOSFET, -40 V, -100 A, 4.4 mΩ