SFH610 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

OPTOISOLATOR 5.3KV TRANS 4-DIP

Part	Turn On / Turn Off Time (Typ)	Voltage - Output (Max) [Max]	Output Type	Current - DC Forward (If) (Max) [Max]	Current Transfer Ratio (Min) [Min]	Package / Case	Current - Output / Channel	Number of Channels	Voltage - Isolation	Voltage - Forward (Vf) (Typ)	Input Type	Operating Temperature [Max]	Operating Temperature [Min]	Current Transfer Ratio (Max)	Supplier Device Package	Vce Saturation (Max) [Max]	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]
Vishay General Semiconductor - Diodes Division SFH610A-2	2.3 µs 3 µs	70 V	1.81 mOhm	60 mA	63 %	4-DIP (0.300" 7.62mm)	50 mA	1	5300 Vrms	1.25 V	DC	100 °C	-55 °C	125 %	4-DIP	400 mV	Through Hole	2 µs	2 µs
Vishay General Semiconductor - Diodes Division SFH610A-3X001	2.3 µs 3 µs	70 V	1.81 mOhm	60 mA	100 %	4-DIP (0.300" 7.62mm)	50 mA	1	5300 Vrms	1.25 V	DC	100 °C	-55 °C	200 %	4-DIP	400 mV	Through Hole	2 µs	2 µs
Vishay General Semiconductor - Diodes Division SFH610A-2X001	2.3 µs 3 µs	70 V	1.81 mOhm	60 mA	63 %	4-DIP (0.300" 7.62mm)	50 mA	1	5300 Vrms	1.25 V	DC	100 °C	-55 °C	125 %	4-DIP	400 mV	Through Hole	2 µs	2 µs
Vishay General Semiconductor - Diodes Division SFH610A-3X016	2.3 µs 3 µs	70 V	1.81 mOhm	60 mA	100 %	4-DIP	50 mA	1	5300 Vrms	1.25 V	DC	100 °C	-55 °C	200 %	4-DIP	400 mV	Through Hole	2 µs	2 µs
Vishay General Semiconductor - Diodes Division SFH610A-4X001	2.3 µs 3 µs	70 V	1.81 mOhm	60 mA	160 %	4-DIP (0.300" 7.62mm)	50 mA	1	5300 Vrms	1.25 V	DC	100 °C	-55 °C	320 %	4-DIP	400 mV	Through Hole	2 µs	2 µs
Vishay General Semiconductor - Diodes Division SFH610A-4X008T	2.3 µs 3 µs	70 V	1.81 mOhm	60 mA	160 %	4-SMD Gull Wing	50 mA	1	5300 Vrms	1.25 V	DC	100 °C	-55 °C	320 %	4-SMD	400 mV	Surface Mount	2 µs	2 µs
Vishay General Semiconductor - Diodes Division SFH610A-1X001	2.3 µs 3 µs	70 V	1.81 mOhm	60 mA	40 %	4-DIP (0.300" 7.62mm)	50 mA	1	5300 Vrms	1.25 V	DC	100 °C	-55 °C	80 %	4-DIP	400 mV	Through Hole	2 µs	2 µs
Vishay General Semiconductor - Diodes Division SFH610A-2X006	2.3 µs 3 µs	70 V	1.81 mOhm	60 mA	63 %	4-DIP	50 mA	1	5300 Vrms	1.25 V	DC	100 °C	-55 °C	125 %	4-DIP	400 mV	Through Hole	2 µs	2 µs
Vishay General Semiconductor - Diodes Division SFH610A-1	2.3 µs 3 µs	70 V	1.81 mOhm	60 mA	40 %	4-DIP (0.300" 7.62mm)	50 mA	1	5300 Vrms	1.25 V	DC	100 °C	-55 °C	80 %	4-DIP	400 mV	Through Hole	2 µs	2 µs
Vishay General Semiconductor - Diodes Division SFH610A-4X016	2.3 µs 3 µs	70 V	1.81 mOhm	60 mA	160 %	4-DIP	50 mA	1	5300 Vrms	1.25 V	DC	100 °C	-55 °C	320 %	4-DIP	400 mV	Through Hole	2 µs	2 µs