IPP90R Series

Manufacturer: INFINEON

Catalog

MOSFET N-CH 900V 11A TO220-3

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]
INFINEON IPP90R500C3XKSA1	1700 pF	N-Channel	11 A	MOSFET (Metal Oxide)	Through Hole	500 mOhm	150 °C	-55 °C	3.5 V	68 nC	10 V	156 W	TO-220-3	900 V	PG-TO220-3-1	20 V
INFINEON IPP90R800C3XKSA1	1100 pF	N-Channel	6.9 A	MOSFET (Metal Oxide)	Through Hole	800 mOhm	150 °C	-55 °C	3.5 V		10 V	104 W	TO-220-3	900 V	PG-TO220-3-1	20 V	42 nC
INFINEON IPP90R1K0C3XKSA1	850 pF	N-Channel	5.7 A	MOSFET (Metal Oxide)	Through Hole	1 Ohm	150 °C	-55 °C	3.5 V		10 V		TO-220-3	900 V	PG-TO220-3-1	20 V	34 nC
INFINEON IPP90R1K2C3XKSA1	710 pF	N-Channel	5.1 A	MOSFET (Metal Oxide)	Through Hole	1.2 Ohm	150 °C	-55 °C	3.5 V	28 nC	10 V	83 W	TO-220-3	900 V	PG-TO220-3	20 V
INFINEON IPP90R340C3XKSA1		N-Channel	15 A	MOSFET (Metal Oxide)	Through Hole	340 mOhm	150 °C	-55 °C	3.5 V	94 nC	10 V		TO-220-3	900 V	PG-TO220-3	20 V		2400 pF	208 W