High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.17 Ω@10V, DFN 8 x 8, DTMOSⅣ-H
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.17 Ω@10V, DFN 8 x 8, DTMOSⅣ-H
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 650 V, 0.17 Ω@10V, DFN 8 x 8, DTMOSⅣ-H
| Part | Vgs(th) (Max) @ Id | Package / Case | Technology | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature | Vgs (Max) | Mounting Type | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 4.5 V | 4-VSFN Exposed Pad | MOSFET (Metal Oxide) | 22 A | 180 W | 10 V | 150 °C | 30 V | Surface Mount | 4-DFN-EP (8x8) | 50 nC | 170 mOhm | 2400 pF | 650 V | N-Channel |