FQP45N15V2 Series

Power MOSFET, N-Channel, QFET®, 150 V, 45 A, 40 mΩ, TO-220

Catalog

Power MOSFET, N-Channel, QFET®, 150 V, 45 A, 40 mΩ, TO-220

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Package / Case	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)
ON Semiconductor FQP45N15V2	10 V	TO-220-3	TO-220-3	220 W	3030 pF	40 mOhm	N-Channel	150 V	-55 °C	150 °C	MOSFET (Metal Oxide)	4 V	45 A	Through Hole	94 nC	30 V

Catalog

Power MOSFET, N-Channel, QFET®, 150 V, 45 A, 40 mΩ, TO-220

Key Features

• 45A, 150V, RDS(on)= 40mΩ(Max.) @VGS= 10 V, ID= 22.5A

• Low gate charge ( Typ. 72nC)

• Low Crss( Typ. 135pF)

• 100% avalanche tested

• 175°C maximum junction temperature rating

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.