MMFTN/P Series
Manufacturer: Diotec Semiconductor
MOSFETS MOSFET, SOT-26, 60V, 0.35A, 150C, N
| Part | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Feature | Configuration | Mounting Type | Rds On (Max) @ Id, Vgs | Power - Max [Max] | Current - Continuous Drain (Id) @ 25°C | Package / Case | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Grade | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Qualification | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diotec Semiconductor | 60 V | 1.3 nC | SOT-26 | 1.5 V | 35 pF | Logic Level Gate | 2 N-Channel (Dual) | Surface Mount | 1.5 Ohm | 500 mW | 350 mA | SOT-23-6 Thin TSOT-23-6 | MOSFET (Metal Oxide) | 150 °C | -55 °C | ||||||||||
Diotec Semiconductor | 30 V | SOT-23-3 (TO-236) | 2 V | Surface Mount | 71 mOhm | 4 A | SC-59 SOT-23-3 TO-236-3 | MOSFET (Metal Oxide) | 150 °C | -55 °C | 1 W | 20 V | 280 pF | P-Channel | Automotive | 5.9 nC | 4 V | 10 V | AEC-Q101 | ||||||
Diotec Semiconductor | SOT-23-3 (TO-236) | Surface Mount | 4 A | SC-59 SOT-23-3 TO-236-3 | P-Channel | 1 W |