IRF73 Series
Manufacturer: INFINEON
MOSFET N/P-CH 30V 4A/3A 8SOIC
| Part | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power - Max [Max] | Technology | Vgs(th) (Max) @ Id | Configuration | Package / Case | Package / Case | Package / Case | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | FET Feature | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | Surface Mount | 520 pF | 1.4 W | MOSFET (Metal Oxide) | 1 V | N and P-Channel | 0.154 in | 8-SOIC | 3.9 mm | 3 A 4 A | 30 V | 25 nC | 8-SO | ||||||
INFINEON | Surface Mount | 610 pF | 2 W | MOSFET (Metal Oxide) | 700 mV | 2 P-Channel (Dual) | 0.154 in | 8-SOIC | 3.9 mm | 4.3 A | 20 V | 22 nC | 8-SO | 150 °C | -55 °C | Logic Level Gate | 90 mOhm | ||
INFINEON | Surface Mount | 2 W | MOSFET (Metal Oxide) | 1 V | 2 P-Channel (Dual) | 0.154 in | 8-SOIC | 3.9 mm | 3.6 A | 30 V | 25 nC | 8-SO | 150 °C | -55 °C | Logic Level Gate | 100 mOhm | 440 pF | ||
INFINEON | Surface Mount | 610 pF | 2 W | MOSFET (Metal Oxide) | 700 mV | 2 P-Channel (Dual) | 0.154 in | 8-SOIC | 3.9 mm | 4.3 A | 20 V | 22 nC | 8-SO | Logic Level Gate | 90 mOhm | ||||
INFINEON | Surface Mount | 2 W | MOSFET (Metal Oxide) | 700 mV | N and P-Channel | 0.154 in | 8-SOIC | 3.9 mm | 4.3 A 5.2 A | 20 V | 8-SO | 150 °C | -55 °C | Logic Level Gate | 50 mOhm | 660 pF | 20 nC | ||
INFINEON | Surface Mount | 2 W | MOSFET (Metal Oxide) | 700 mV | N and P-Channel | 0.154 in | 8-SOIC | 3.9 mm | 4.3 A 5.2 A | 20 V | 8-SO | 150 °C | -55 °C | Logic Level Gate | 50 mOhm | 660 pF | 20 nC | ||
INFINEON | Surface Mount | 2 W | MOSFET (Metal Oxide) | 1 V | 2 P-Channel (Dual) | 0.154 in | 8-SOIC | 3.9 mm | 3.6 A | 30 V | 25 nC | 8-SO | 150 °C | -55 °C | Logic Level Gate | 100 mOhm | 440 pF | ||
INFINEON | Surface Mount | 610 pF | 2 W | MOSFET (Metal Oxide) | 700 mV | 2 P-Channel (Dual) | 0.154 in | 8-SOIC | 3.9 mm | 4.3 A | 20 V | 22 nC | 8-SO | 150 °C | -55 °C | Logic Level Gate | 90 mOhm | ||
INFINEON | Surface Mount | 520 pF | 1.4 W | MOSFET (Metal Oxide) | 1 V | N and P-Channel | 0.154 in | 8-SOIC | 3.9 mm | 3 A 4 A | 30 V | 25 nC | 8-SO | 150 °C | -55 °C | ||||
INFINEON | Surface Mount | 2 W | MOSFET (Metal Oxide) | 700 mV | 2 N-Channel (Dual) | 0.154 in | 8-SOIC | 3.9 mm | 5.2 A | 20 V | 8-SO | 150 °C | -55 °C | Logic Level Gate | 50 mOhm | 660 pF | 20 nC |