N-channel TrenchMOS logic level FET
N-channel TrenchMOS logic level FET
| Part | Grade | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Mounting Type | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | Vgs (Max) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Technology | Current - Continuous Drain (Id) @ 25°C | Qualification | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Automotive | 60 V | 6900 pF | N-Channel | Surface Mount | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 175 °C | -55 °C | 182 W | 10 V | D2PAK | 48 nC | 5.9 mOhm | MOSFET (Metal Oxide) | 75 A | AEC-Q101 | 5 V | 2.1 V |