IRFBG30 Series

Catalog

MOSFET N-CH 1000V 3.1A TO220AB

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Supplier Device Package
Vishay General Semiconductor - Diodes Division IRFBG30PBF	10 V	125 W	3.1 A	4 V	N-Channel	980 pF	Through Hole	5 Ohm	TO-220-3	MOSFET (Metal Oxide)	80 nC	1000 V	-55 °C	150 °C	20 V	TO-220AB
Vishay General Semiconductor - Diodes Division IRFBG30	10 V	125 W	3.1 A	4 V	N-Channel	980 pF	Through Hole	5 Ohm	TO-220-3	MOSFET (Metal Oxide)	80 nC	1000 V	-55 °C	150 °C	20 V	TO-220AB
Vishay General Semiconductor - Diodes Division IRFBG30PBF-BE3	10 V	125 W	3.1 A	4 V	N-Channel	980 pF	Through Hole	5 Ohm	TO-220-3	MOSFET (Metal Oxide)	80 nC	1000 V	-55 °C	150 °C	20 V	TO-220AB