LTC4449 Series

Manufacturer: Analog Devices Inc./Maxim Integrated

Catalog

IC GATE DRVR HALF-BRIDGE 8DFN

Part	Gate Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Driven Configuration	Logic Voltage - VIL, VIH	Supplier Device Package	Voltage - Supply [Min]	Voltage - Supply [Max]	Input Type	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Package / Case	Rise / Fall Time (Typ)	Rise / Fall Time (Typ)	Number of Drivers	Channel Type
Analog Devices Inc./Maxim Integrated LTC4449EDCB	MOSFET (N-Channel) N-Channel MOSFET	-40 C	125 °C	3.2 A	4.5 A	Half-Bridge	3 V 6.5 V	8-DFN (2x3)	4 V	6.5 V	Non-Inverting	42 V	Surface Mount	8-WFDFN Exposed Pad	7 ns	8 ns	2	Synchronous
Analog Devices Inc./Maxim Integrated LTC4449IDCB#TRPBF	MOSFET (N-Channel) N-Channel MOSFET	-40 C	125 °C	3.2 A	4.5 A	Half-Bridge	3 V 6.5 V	8-DFN (2x3)	4 V	6.5 V	Non-Inverting	42 V	Surface Mount	8-WFDFN Exposed Pad	7 ns	8 ns	2	Synchronous
Analog Devices Inc./Maxim Integrated LTC4449EDCB#TRMPBF	MOSFET (N-Channel) N-Channel MOSFET	-40 C	125 °C	3.2 A	4.5 A	Half-Bridge	3 V 6.5 V	8-DFN (2x3)	4 V	6.5 V	Non-Inverting	42 V	Surface Mount	8-WFDFN Exposed Pad	7 ns	8 ns	2	Synchronous
Analog Devices Inc./Maxim Integrated LTC4449EDCB#TRPBF	MOSFET (N-Channel) N-Channel MOSFET	-40 C	125 °C	3.2 A	4.5 A	Half-Bridge	3 V 6.5 V	8-DFN (2x3)	4 V	6.5 V	Non-Inverting	42 V	Surface Mount	8-WFDFN Exposed Pad	7 ns	8 ns	2	Synchronous
Analog Devices Inc./Maxim Integrated LTC4449IDCB	MOSFET (N-Channel) N-Channel MOSFET	-40 C	125 °C	3.2 A	4.5 A	Half-Bridge	3 V 6.5 V	8-DFN (2x3)	4 V	6.5 V	Non-Inverting	42 V	Surface Mount	8-WFDFN Exposed Pad	7 ns	8 ns	2	Synchronous
Analog Devices Inc./Maxim Integrated LTC4449IDCB#TRMPBF	MOSFET (N-Channel) N-Channel MOSFET	-40 C	125 °C	3.2 A	4.5 A	Half-Bridge	3 V 6.5 V	8-DFN (2x3)	4 V	6.5 V	Non-Inverting	42 V	Surface Mount	8-WFDFN Exposed Pad	7 ns	8 ns	2	Synchronous