APT10S Series
Manufacturer: Microsemi Corporation
DIODE ARR SIC SCHOT 650V TO220
| Part | Current - Average Rectified (Io) (per Diode) | Supplier Device Package | Current - Reverse Leakage @ Vr | Diode Configuration | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Package / Case | Mounting Type | Speed | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) @ If | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation | 17 A | TO-220 | 200 µA | 1 Pair Common Cathode | 650 V | -55 °C | 150 °C | TO-220-3 | Through Hole | 500 mA | 0 ns | 1.8 V | SiC (Silicon Carbide) Schottky |
Microsemi Corporation | 36 A | TO-247 | 200 µA | 1 Pair Common Cathode | 1.2 kV | -55 °C | 150 °C | TO-247-3 | Through Hole | 500 mA | 0 ns | 1.8 V | SiC (Silicon Carbide) Schottky |