TSM1 Series

Catalog

600V, 1.2A, SINGLE N-CHANNEL HIGH VOLTAGE MOSFETS

Part	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max) [Max]	Package / Case	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package
Taiwan Semiconductor Corporation TSM1NB60CP	10 Ohm	138 pF	MOSFET (Metal Oxide)	6.1 nC	1 A	Surface Mount	600 V	30 V	39 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	150 °C	-55 °C	10 V	4.5 V	TO-252 (DPAK)