SIHF540 Series

Catalog

MOSFET N-CH 100V 28A D2PAK

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SIHF540STRL-GE3	77 mOhm	-55 °C	175 ░C	100 V	TO-263 (D2PAK)	20 V	3.7 W 150 W	28 A	4 V	Surface Mount	1700 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	10 V	N-Channel	72 nC
Vishay General Semiconductor - Diodes Division SIHF540S-GE3	77 mOhm	-55 °C	175 ░C	100 V	TO-263 (D2PAK)	20 V	3.7 W 150 W	28 A	4 V	Surface Mount	1700 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	10 V	N-Channel	72 nC