SI4330 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET 2N-CH 30V 6.6A 8SOIC
| Part | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] | Configuration | FET Feature | Supplier Device Package | Mounting Type | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 3 V | 6.6 A | 30 V | 8-SOIC | 3.9 mm | 0.154 in | 2 N-Channel (Dual) | Logic Level Gate | 8-SOIC | Surface Mount | 16.5 mOhm | -55 °C | 150 °C | MOSFET (Metal Oxide) | 1.1 W | 20 nC |