SI7960 Series

Catalog

MOSFET 2N-CH 60V 6.2A PPAK SO8

Part	Configuration	Drain to Source Voltage (Vdss)	Supplier Device Package	FET Feature	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Package / Case
Vishay General Semiconductor - Diodes Division SI7960DP-T1-GE3	2 N-Channel (Dual)	60 V	PowerPAK® SO-8 Dual	Logic Level Gate	6.2 A	Surface Mount	MOSFET (Metal Oxide)	-55 °C	150 °C	1.4 W	75 nC	3 V	21 mOhm	PowerPAK® SO-8 Dual
Vishay General Semiconductor - Diodes Division SI7960DP-T1-E3	2 N-Channel (Dual)	60 V	PowerPAK® SO-8 Dual	Logic Level Gate	6.2 A	Surface Mount	MOSFET (Metal Oxide)	-55 °C	150 °C	1.4 W	75 nC	3 V	21 mOhm	PowerPAK® SO-8 Dual