IRF520 Series

Catalog

MOSFET N-CH 100V 9.2A TO220AB

Part	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division IRF520PBF-BE3	MOSFET (Metal Oxide)	TO-220-3	270 mOhm	16 nC	20 V	360 pF	10 V	60 W	TO-220AB	N-Channel	100 V	4 V	Through Hole	-55 °C	175 ░C	9.2 A
Vishay General Semiconductor - Diodes Division IRF520STRR	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	270 mOhm	16 nC	20 V	360 pF	10 V	3.7 W 60 W	TO-263 (D2PAK)	N-Channel	100 V	4 V	Surface Mount	-55 °C	175 ░C	9.2 A
Vishay General Semiconductor - Diodes Division IRF520S	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	270 mOhm	16 nC	20 V	360 pF	10 V	3.7 W 60 W	TO-263 (D2PAK)	N-Channel	100 V	4 V	Surface Mount	-55 °C	175 ░C	9.2 A
Vishay General Semiconductor - Diodes Division IRF520STRL	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	270 mOhm	16 nC	20 V	360 pF	10 V	3.7 W 60 W	TO-263 (D2PAK)	N-Channel	100 V	4 V	Surface Mount	-55 °C	175 ░C	9.2 A