SI4446 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 40V 3.9A 8SO
| Part | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Package / Case | Package / Case [y] | Package / Case [x] | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Technology | Supplier Device Package | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 40 mOhm | 12 nC | 3.9 A | 1.1 W | 700 pF | N-Channel | 8-SOIC | 3.9 mm | 0.154 in | 4.5 V 10 V | 1.6 V | MOSFET (Metal Oxide) | 8-SOIC | 12 V | -55 °C | 150 °C | 40 V | Surface Mount |