RN1609 Series
Manufacturer: Toshiba Semiconductor and Storage
TRANS 2NPN PREBIAS 0.3W SM6
| Part | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Resistor - Base (R1) | Power - Max [Max] | Mounting Type | Current - Collector Cutoff (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | Supplier Device Package | Package / Case | Current - Collector (Ic) (Max) [Max] | Frequency - Transition | Resistor - Emitter Base (R2) | Voltage - Collector Emitter Breakdown (Max) [Max] | Transistor Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 70 hFE | 47 kOhms | 300 mW | Surface Mount | 100 nA | 300 mV | SM6 | SC-74 SOT-457 | 100 mA | 250 MHz | 22 kOhms | 50 V | 2 NPN - Pre-Biased (Dual) |