Catalog
30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Vgs(th) (Max) @ Id | Vgs (Max) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drain to Source Voltage (Vdss) | FET Type | Package / Case | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Power Dissipation (Max) | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 1.25 V | 12 V | TO-236AB | 1.8 V | 4.5 V | 30 V | N-Channel | SC-59 SOT-23-3 TO-236-3 | 1 A | 79.3 pF | 330 mW | 2.1 W | Surface Mount | 150 °C | -55 °C | 270 mOhm | 1.2 nC | MOSFET (Metal Oxide) |