MSRT250120 Series
Manufacturer: GeneSiC Semiconductor
Beta
⌘K
DIODE MODULE GP 1.2KV 3TOWER
| Part | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Technology | Package / Case | Speed [Min] | Current - Average Rectified (Io) (per Diode) | Current - Reverse Leakage @ Vr | Diode Configuration | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GeneSiC Semiconductor | 1.2 V | -55 °C | 150 °C | Chassis Mount | 1.2 kV | Standard | Three Tower | 200 mA 500 ns | 250 A | 15 µA | 1 Pair Common Cathode | Three Tower |