Catalog
P-Channel Enhancement Mode MOSFET
Description
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TN1.pdf
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | FET Type | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Technology | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Package / Case [y] | Package / Case [x] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | 4.5 A | 50 mOhm | 10.5 nC | P-Channel | SOT-23-6 Thin TSOT-23-6 | 620 pF | MOSFET (Metal Oxide) | Surface Mount | -55 °C | 150 °C | 25 V | 2 V | 1.8 W | 30 V | 4.5 V 10 V | |||
 Diodes Inc | 4.8 A | 45 mOhm | 10.5 nC | P-Channel | 8-SOIC | 620 pF | MOSFET (Metal Oxide) | Surface Mount | -55 °C | 150 °C | 25 V | 2 V | 1.7 W | 30 V | 4.5 V 10 V | 3.9 mm | 0.154 in | 8-SO |