TSM4N80 Series

Catalog

MOSFET N-CHANNEL 800V 4A TO220

Part	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Technology	Package / Case	Drive Voltage (Max Rds On, Min Rds On)
Taiwan Semiconductor Corporation TSM4N80CZ C0G	30 V	150 °C	-55 °C	4 V	20 nC	4 A	800 V	N-Channel	38.7 W	3 Ohm	Through Hole	955 pF	TO-220	MOSFET (Metal Oxide)	TO-220-3	10 V