Catalog
650V, 15A, THD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching.
Beta
⌘K
650V, 15A, THD, Silicon-carbide (SiC) SBD
650V, 15A, THD, Silicon-carbide (SiC) SBD
| Part | Voltage - Forward (Vf) (Max) @ If [Max] | Package / Case | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Mounting Type | Current - Reverse Leakage @ Vr | Speed | Technology | Operating Temperature - Junction | Reverse Recovery Time (trr) | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 1.5 V | TO-220-2 | TO-220ACFP | 650 V | Through Hole | 75 µA | 500 mA | SiC (Silicon Carbide) Schottky | 175 °C | 0 ns | 15 A |