FQA7 Series

Catalog

MOSFET N-CH 900V 7A TO3P

Part	Technology	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FQA7N90M	MOSFET (Metal Oxide)	N-Channel	210 W	1880 pF	-55 °C	150 °C	30 V	SC-65-3 TO-3P-3	10 V	1.8 Ohm	Through Hole	7 A	52 nC	5 V	TO-3P	900 V
ON Semiconductor FQA7N80	MOSFET (Metal Oxide)	N-Channel			-55 °C	150 °C	30 V	SC-65-3 TO-3P-3	10 V	1.5 Ohm	Through Hole	7.2 A	52 nC	5 V	TO-3P	800 V	1850 pF
ON Semiconductor FQA7N80C	MOSFET (Metal Oxide)	N-Channel			-55 °C	150 °C	30 V	SC-65-3 TO-3P-3	10 V	1.9 Ohm	Through Hole	7 A		5 V	TO-3P	800 V	1680 pF	35 nC
ON Semiconductor FQA7N80C	MOSFET (Metal Oxide)	N-Channel			-55 °C	150 °C	30 V	SC-65-3 TO-3P-3	10 V	1.9 Ohm	Through Hole	7 A		5 V	TO-3P	800 V	1680 pF	35 nC
ON Semiconductor FQA7N80	MOSFET (Metal Oxide)	N-Channel			-55 °C	150 °C	30 V	SC-65-3 TO-3P-3	10 V	1.5 Ohm	Through Hole	7.2 A	52 nC	5 V	TO-3P	800 V	1850 pF