S1J Series

Catalog

DIODE GEN PURP 600V 1A DO214AC

Part	Current - Average Rectified (Io)	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Technology	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Grade	Qualification
Vishay General Semiconductor - Diodes Division S1JHE3/61T	1 A	Surface Mount	1 µA	600 V	DO-214AC SMA	Standard	DO-214AC (SMA)	150 °C	-55 °C	1.8 µs	Standard Recovery >500ns	200 mA	1.1 V
Vishay General Semiconductor - Diodes Division S1J-E3/5AT	1 A	Surface Mount	1 µA	600 V	DO-214AC SMA	Standard	DO-214AC (SMA)	150 °C	-55 °C	1.8 µs	Standard Recovery >500ns	200 mA	1.1 V
Vishay General Semiconductor - Diodes Division S1J-E3/61T	1 A	Surface Mount	1 µA	600 V	DO-214AC SMA	Standard	DO-214AC (SMA)	150 °C	-55 °C	1.8 µs	Standard Recovery >500ns	200 mA	1.1 V
Vishay General Semiconductor - Diodes Division S1JHE3_A/H	1 A	Surface Mount	1 µA	600 V	DO-214AC SMA	Standard	DO-214AC (SMA)	150 °C	-55 °C	1.8 µs	Standard Recovery >500ns	200 mA	1.1 V	Automotive	AEC-Q101
Vishay General Semiconductor - Diodes Division S1JHE3/5AT	1 A	Surface Mount	1 µA	600 V	DO-214AC SMA	Standard	DO-214AC (SMA)	150 °C	-55 °C	1.8 µs	Standard Recovery >500ns	200 mA	1.1 V