IS64LF25636 Series
Manufacturer: ISSI, Integrated Silicon Solution Inc
IC SRAM 9MBIT PARALLEL 165TFBGA
| Part | Memory Interface | Package / Case | Memory Format | Mounting Type | Memory Organization | Memory Size | Operating Temperature [Max] | Operating Temperature [Min] | Clock Frequency | Supplier Device Package | Memory Type | Access Time | Technology | Voltage - Supply [Min] | Voltage - Supply [Max] | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | Parallel | 165-TBGA | SRAM | Surface Mount | 256 K | 9 Mbit | 125 °C | -40 °C | 117 MHz | 165-TFBGA (13x15) | Volatile | 7.5 ns | SRAM - Synchronous SDR | 3.135 V | 3.465 V | ||
ISSI, Integrated Silicon Solution Inc | Parallel | 165-TBGA | SRAM | Surface Mount | 256 K | 9 Mbit | 125 °C | -40 °C | 117 MHz | 165-TFBGA (13x15) | Volatile | 7.5 ns | SRAM - Standard | 3.135 V | 3.465 V | AEC-Q100 | Automotive |
ISSI, Integrated Silicon Solution Inc | Parallel | 100-LQFP | SRAM | Surface Mount | 256 K | 9 Mbit | 125 °C | -40 °C | 117 MHz | 100-LQFP (14x20) | Volatile | 7.5 ns | SRAM - Synchronous SDR | 3.135 V | 3.465 V | ||
ISSI, Integrated Silicon Solution Inc | Parallel | 100-LQFP | SRAM | Surface Mount | 256 K | 9 Mbit | 125 °C | -40 °C | 117 MHz | 100-LQFP (14x20) | Volatile | 7.5 ns | SRAM - Synchronous SDR | 3.135 V | 3.465 V | ||
ISSI, Integrated Silicon Solution Inc | Parallel | 165-TBGA | SRAM | Surface Mount | 256 K | 9 Mbit | 125 °C | -40 °C | 117 MHz | 165-TFBGA (13x15) | Volatile | 7.5 ns | SRAM - Synchronous SDR | 3.135 V | 3.465 V |