TK6A60 Series

Catalog

MOSFET N-CH 600V 6A TO220SIS

Part	Power Dissipation (Max)	Operating Temperature	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage TK6A60D(STA4,Q,M)	40 W	150 °C	Through Hole	N-Channel	10 V	30 V	800 pF	6 A	TO-220-3 Full Pack	16 nC	1.25 Ohm	MOSFET (Metal Oxide)	TO-220SIS	600 V