RN1965 Series

Catalog

TRANS 2PNP PREBIAS 0.1W ES6

Part	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Resistor - Emitter Base (R2)	Supplier Device Package	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Package / Case	Resistor - Base (R1)	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Power - Max [Max]	Transistor Type
Toshiba Semiconductor and Storage RN1965FE(TE85L,F)	100 nA	300 mV	47 kOhms	ES6	250 MHz	100 mA	SOT-563 SOT-666	2.2 kOhm	50 V	80	Surface Mount	100 mW	2 PNP - Pre-Biased (Dual)
Toshiba Semiconductor and Storage RN1965(TE85L,F)	100 nA	300 mV	47 kOhms	US6	250 MHz	100 mA	6-TSSOP SC-88 SOT-363	2.2 kOhm	50 V	80	Surface Mount	200 mW	2 NPN - Pre-Biased (Dual)