IRFR9120 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 100V 5.6A DPAK
| Part | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Technology | Supplier Device Package | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 18 nC | 600 mOhm | 100 V | 10 V | 20 V | 5.6 A | 2.5 W 42 W | 4 V | -55 °C | 150 °C | Surface Mount | 390 pF | MOSFET (Metal Oxide) | DPAK | P-Channel |
Vishay General Semiconductor - Diodes Division | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 18 nC | 600 mOhm | 100 V | 10 V | 20 V | 5.6 A | 2.5 W 42 W | 4 V | -55 °C | 150 °C | Surface Mount | 390 pF | MOSFET (Metal Oxide) | TO-252AA | P-Channel |
Vishay General Semiconductor - Diodes Division | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 18 nC | 600 mOhm | 100 V | 10 V | 20 V | 5.6 A | 2.5 W 42 W | 4 V | -55 °C | 150 °C | Surface Mount | 390 pF | MOSFET (Metal Oxide) | DPAK | P-Channel |
Vishay General Semiconductor - Diodes Division | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 18 nC | 600 mOhm | 100 V | 10 V | 20 V | 5.6 A | 2.5 W 42 W | 4 V | -55 °C | 150 °C | Surface Mount | 390 pF | MOSFET (Metal Oxide) | DPAK | P-Channel |